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貼片電阻

首要性能參數

貼片阻值,最快250瓦，最快26 GHz

API Inmet出示了三種Powerfilm ?片式電容器器。這樣的界面貼裝構件頻繁使用于比調衰減器和威爾金森工作電壓劃分器中。貼片電容器的阻值面積從5到300歐姆，有不同面積和界面解決可供確定。別設汁，值和高級設置也可應耍求出示。

物料詳細情況介紹一下

貼片電容

Model	Power (Watts)	Frequency (GHz)	Ceramic Substrate	Resistor Film	Wrap Options	Finish Option	Width (Inches)	Length (Inches)	Height (Inches)
26TPC20-40	1	26	BeO	Thick	X, W, S	G, N, T, H	0.02	0.04	0.01
	60	3	BeO	Thin	X	N, T, H	0.25	0.25	0.06
	20	4	AlN	Thin	X, W, S	N, T, H	0.1	0.2	0.04
ANC200-200	30	4	AlN	Thin	X, S	N, T, H	0.2	0.2	0.04
	40	2.5	AlN	Thin	X, W, S	N, T, H	0.25	0.25	0.04
ANC250-375	150	3	AlN	Thin	X	N, T, H	0.25	0.375	0.04
ANC350-225	100	2	AlN	Thin	X	N, T, H	0.35	0.225	0.04
ANC375-375	200	1	AlN	Thin	X	N, T, H	0.375	0.375	0.04
	10	2.5	AlN	Thin	X, W, S	N, T, H	0.05	0.05	0.01
	5	4	AlN	Thin	X, W, S	N, T, H	0.05	0.05	0.01
KAC100-200A	20	3	AlN	Thick	X, S	N, T, H	0.1	0.2	0.04
KAC250-250A	75	5	AlN	Thick	X, S	N, T, H	0.25	0.25	0.04
KAC250-375A	100	3	AlN	Thick	X, S	N, T, H	0.25	0.375	0.04
KAC60-120A	10	4	AlN	Thick	X, S	N, T, H	0.06	0.12	0.025
	3	18	BeO	TaN	X, W, S	G, N, T, H	0.02	0.04	0.01
	5	12.4	BeO	TaN	X, W, S	G, N, T, H	0.025	0.05	0.01
	25	4	BeO	TaN	X, W, S	G, N, T, H	0.05	0.1	0.01
	8	10	BeO	TaN	X, W, S	G, N, T, H	0.05	0.05	0.01
	50	4	BeO	TaN	X, W, S	G, N, T, H	0.075	0.15	0.01
PC50-50	5	4	Alumina	Thick	X, W, S	N, T, H	0.05	0.05	0.01
	65	4	BeO	Thin	X, W, S	N, T, H	0.1	0.2	0.04
	125	1	BeO	Thin	X	N, T, H	0.25	0.25	0.04
	80	1.5	BeO	Thin	X	N, T, H	0.25	0.25	0.06
	150	1	BeO	Thin	X	N, T, H	0.25	0.375	0.04
	250	1	BeO	Thin	X	N, T, H	0.375	0.375	0.04
	10	8	BeO	Thin	X, S	N, T, H	0.05	0.1	0.04
	10	6	BeO	Thin	X, W, S	N, T, H	0.05	0.1	0.025